Power Matters Advantages of SiC MOSFETs in Power Applications Power Forum, Bologna – September 18th, 2014 Pascal Ducluzeau Product Marketing Director Microsemi Power Module Products pducluzeau@microsemi.com Topics § Advantages of SiC in Power Applications § SiC Power Module Advantages § Microsemi SiC MOSFETs Benchmark § Microsemi SiC Program © 2014 Microsemi Corporation Power Matters 2 Advantages of SiC in Power Applications © 2014 Microsemi Corporation SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) 10x Higher Lower On-Resistance Higher efficiency Electron sat. velocity (cm/s) 2x Higher Faster switching Size reduction Bandgap energy (ev) 3x Higher Higher Junction temperature Improved cooling Thermal conductivity (W/cm.K) 3x Higher Higher power density Higher current capabilities Self regulation Easy paralleling Positive Temperature coefficient SiC is the perfect technology to address today and future applications - Lower Power Losses Higher frequency cap. Higher junction temp. © 2014 Microsemi Corporation Easier cooling Downsized system Higher Reliability Power Matters 4 Markets and advantages of SiC Markets Aerospace Defense Oil drilling Transportation Applications Actuation Air Conditioning Power Distribution Motor Drives Aux. Power Supplies Power Train Fast Battery Charger DC/DC Converters KERS High Temp. High Freq. Small, Light System Low Loss, Efficiency X X X X X X X X X X X X X X Solar Energy PV inverter X Wind turbine Inverter X Motor drives Welding UPS, SMPS Induction Heating X X X MRI power supply X-Ray power supply X X X Industrial Medical © 2014 Microsemi Corporation X Power Matters 5 Transistor Power Loss Comparison (30kHz, 50% duty cycle, ILOAD=15A, VOFF=800V, TCASE=80°C, TJ=125°C) 180 TFS=TRENCH & FIELD STOP – PT = PUNCH-THROUGH – NPT = NON-PUNCH-THROUGH 160 140 Turn-off Losses Turn-on Losses 120 Power Loss [W] Conduction Losses 100 80 50% lower losses than fastest IGBT type 60 40 TJ=150°C 20 0 TFS IGBT PT IGBT © 2014 Microsemi Corporation NPT IGBT SiC MOSFET Power Matters 6 SiC in Electric Vehicles – Case Study #1 Toyota approximates that 20% of HV total electrical power loss occurs in the power semiconductors One key to improving fuel efficiency is to increase power semiconductor efficiency Compared to silicon, SiC MOSFETs operate with 1/10 the power loss and switching frequency can be increased by a factor of ten. Aim to leverage the benefits of high frequency and high efficiency to enable PCU downsizing of 80% Over 5% fuel efficiency improvement confirmed with SiC MOSFETs GOAL: Toyota is aiming for a 10% improvement in fuel efficiency with SiC MOSFETs Source: Toyota-Denso presentation, Automotive Engineering Exposition in Japan May 2014 © 2014 Microsemi Corporation Power Matters 7 SiC in Electric Vehicles – Case Study #2 Total Inverter & Battery Cost Reduction with SiC 5% TOTAL COST REDUCTION with SiC-MOSFET 100% 6,5% 95% 1,4% % Original Cost 6,0% 90% 4,3% 1,0% 2,2% 2,2% 85% 86% 80% 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1 - 600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) 6,2% 80% 75% Battery Si IGBT Semiconductors Magnetics © 2014 Microsemi Corporation Passives SiC MOSFET Other Power Matters 8 SiC in Electric Vehicles – Case Study #2 Semiconductor % Efficiency Loss versus Load 10% 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1 - 600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) 9% 7% 6% 5% 4% 3% 2% Si IGBT 55-70 mph – 88-112km/h 7% improvement Semiconductor Loss [% Efficiency] 8% SiC MOSFET on level ground the EV inverter is generating only about 6% of its rated capacity at 55mph 1% 0% 0% 10% 20% 30% 40% 50% 60% Inverter Load [%] 70% © 2014 Microsemi Corporation 80% 90% 100% Power Matters 9 SiC in Electric Vehicles – Case Study #2 SiC MOSFET versus PT IGBT Summary § 5% reduction in Inverter & Battery cost using SiC MOSFETs § 7% improvement in fuel efficiency using SiC MOSFETs ̶ Lower switching losses ̶ Higher switching frequency ̶ Higher temperature capable ̶ Better current sharing when paralleled ̶ No need for anti-parallel diode © 2014 Microsemi Corporation 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1 - 600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) Power Matters 10 SiC Power Modules Advantages © 2014 Microsemi Corporation SiC-MOSFET and packaging § Whatever the selected SiC-MOS device, packaging choice will help to emphasize the best of SiC performance for the application. Ø High stray inductances will lead to higher oscillation and voltage spikes Ø Not efficient paralleling will compromise reliability of the system Ø Symmetric layout will guaranty performance stability ØBuilt-in internal series gate resistor for easy paralleling ØKelvin source signal for easy drive D3 - 62mm package – 30mm height 30nH stray inductance SP6 - 62mm package – 17mm height 15nH stray inductance © 2014 Microsemi Corporation SP6P - 62mm package – 12mm height 5nH stray inductance Power Matters 12 SiC Module advantages vs Discrete Assembly Features Benefits Higher power density Size and cost reduction Isolated and conductive substrate Excellent thermal management Internal wiring Less external hardware Minimum parasitic Higher performance and efficiency Minimum output connections Reduced assembly time Mix & match components Optimized losses Performance Reliability Size Cost Whole system improvement SiC COST Reduced size and cost of magnetics and heatsink © 2014 Microsemi Corporation Power Matters 13 CTE & Thermal Management Module performance and reliability depends on assembly material choice Base Substrate Material CTE (ppm/K) Thermal conductivity (W/m.K) Density (g/cc) CuW 6.5 190 17 AlSiC 7 170 2.9 Cu 17 390 8.9 Al2O3 7 25 - AlN 5 170 - Si3N4 3 60 - Thermal CTE conductivity Rthjc (K/W) (ppm/K) (W/m.K) Silicon Die (120 mm2) or SiC Die (40mm2) 4 136 Cu/Al2O3 17/7 390/25 0.35 AlSiC/Al2O3 7/7 170/25 0.385 Cu/AlN 17/5 390/170 0.28 AlSiC/AlN 7/5 170/170 0.31 AlSiC/Si3N4 7/3 170/60 0.31 DBC substrate Solder Joint Die Si 4 136 - SiC 2.6 370 - Ø AlSiC and Alumina offer best CTE matching Dice Solder Base Ø AlN and Si3N4 on AlSiC offer higher thermal performance with good CTE matching § More closely matched TCEs of materials increases module lifetime § Higher thermal conductivity maximizes thermal performance § Engineered materials such as AlSiC provide substantial weight reductions (up to 50%) over traditional copper material © 2014 Microsemi Corporation Power Matters 14 SiC Module = Higher Power Density Comparison SiC vs Si Microsemi Microsemi APTGLQ300A120G APTMC120AM20CT1AG Semiconductor type Trench4 IGBT SiC Mosfet Ratings @ Tc=80°C 300A/1200V 108A/1200V Package type SP6 – 108x62mm SP1 – 52x41mm 3x smaller 130A 130A - 60A 115A ~2.0x higher 16.0mJ 3.4mJ 4.7x lower Current @ 30kHz Tc=75°C, D=50%, V=600V Current @ 50kHz Tc=75°C, D=50%, V=600V Eon+Eoff @ 100A Tj=150°C, V=600V Operating Frequency vs Drain Current 200 MORE POWER in SMALLER VOLUME Frequency (kHz) Parameter SiC MOSFET 150 VBUS=600V D=50% TJ=150°C TC=75°C 100 Si IGBT 50 0 40 60 80 100 120 140 160 ID, Drain Current (A) © 2014 Microsemi Corporation Power Matters 15 Parallel diode to SiC-MOS: to Be or not to Be? Intrinsic Body diode Additional Fast Series & Parallel diode Additional Parallel diode Si-MOSFET SiC-MOSFET SiC ADVANTAGE Poor Reverse Recovery Characteristics Low Vf Good Reverse Recovery Characterisitcs. Higher Vf Low SiC diode switching losses Blocking series diode mandatory to avoid slow body diode to conduct No Need for blocking diode Less components count and less conduction losses No advantage: Current flow would go to body diode only Mandatory to reduce high conduction losses of body diode Allow full SiC-MOS performance without limitation of body diode losses • SiC-MOS Body diode is enough when operated at low duty cycle • SiC-MOS parallel diode required if operated at high duty cycle • Parallel diode can be avoided if SiC -MOSFET is turned ON (Synchronous Rectification) © 2014 Microsemi Corporation Power Matters 16 SiC-MOS VSD performance vs VGS APTMC120AM20CT1AG – VSD curves vs ISD at given VGS values • The lower the negative gate voltage the higher the Vsd • The higher the positive gate voltage the lower the Vsd • To minimize the diode conduction losses the SiC-MOSFET should be turned ON with VGS = 20V © 2014 Microsemi Corporation Power Matters 17 SiC-MOSFET gate drive Example of Opto-driver gate driver that can be used to drive SiC Mosfet • Increasing Gate voltage to 20V reduces total losses by 30% • Negative gate bias further reduces losses, but the impact is smaller than for IGBTs • Vgs voltage range should be within -5V to +20V to optimize total losses © 2014 Microsemi Corporation Power Matters 18 SiC-MOS Power module application INDUCTION HEATING 10 x 1200V – 80mΩ SiC Most per switch 12 x 1200V – 10A SiC schottky per switch Practical example: CUSTOMER’s OBJECTIVE MODULE COUNT REDUCTION PER SYSTEM IMPROVED PERFORMANCE AND RELAIBILITY LOWER SYSTEM COST DC Voltage = 535V Sinusoidal RMS current = 136A out Water cooled heat sink - inlet temperature = 14°C DC power = 61.6kW Efficiency = 99.2% @ Fsw=217KHz ZVS © 2014 Microsemi Corporation Power Matters 19 SiC-MOS Power module application AUTOMOTIVE 2 x 1200V – 25mΩ SiC Most per switch 2 x 1200V – 20A SiC schottky per switch 9 modules size 52mm x 41mm Practical example in race car application CUSTOMER’s OBJECTIVE SMALLER AND LIGHTER SYSTEM RELIABILITY PERFORMANCE 3-phase inverter – 3 modules per phase 100KW DC voltage = 900V >220A RMS @ Tc=75°C Fsw >100kHz © 2014 Microsemi Corporation Power Matters 20 Microsemi SiC MOSFETs Benchmark © 2014 Microsemi Corporation Normalized RDSON (to 25°C) Best in Class RDS(ON) vs. Temperature 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 Competitor 2 80mΩ Microsemi APT50SM120B 50mΩ Competitor 1 80mΩ Microsemi APT40SM120B 80mΩ 25 50 75 100 125 150 175 200 Tj [°C] © 2014 Microsemi Corporation Power Matters 22 Best in Class Built in Gate Resistance 10 9 8 RG (Ω) 7 6 Competition High RG 5 4 3 2 Microsemi Low RG 1 3 4 Competitor 1 2 APT40SM120B 80mΩ Oscillation-free with minimal external RG 1 APT50SM120B 50mΩ 0 Competitor 2 0 5 Ultra Low Gate Resistance Minimized Switching Energy Loss & Allow Higher Switching Frequency Microsemi © 2014 Microsemi Corporation Power Matters 23 Switching Energy Benchmark Total Switching Energy [mJ] 6 Microsemi 80mΩ Microsemi 50mΩ Competitor 2 80mΩ 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 Current [A] >30% less switching loss translates to cooler dynamic operations and capability for higher switching frequencies © 2014 Microsemi Corporation Power Matters 24 Switching Energy Benchmark 1.E+06 Microsemi APT50SM120B 50mΩ fmax [Hz] 1.E+05 Microsemi APT40SM120B 80mΩ 1.E+04 Competitor 2 80mΩ † Tj=150°C; Tc=75°C 1.E+03 0 10 20 30 40 50 60 ID [A] Dynamic performance breakaway enablers: ü Superior EON (ton) due to high gm, ultra low RG ü Superior EOFF due to extremely low RG (yet oscillation free with very low external RG) ü Low RDSON at high temperatures extends switching frequency and current capability © 2014 Microsemi Corporation Power Matters 25 Superior Short Circuit Withstand Microsemi APT40SM120B 80mΩ Competitor 1 80mΩ 8.5µs Microsemi’s 80mΩ SiC MOSFET demonstrates 25% longer short circuit capability © 2014 Microsemi Corporation Power Matters 26 Microsemi SiC Program © 2014 Microsemi Corporation Silicon Carbide (SiC) Manufacturing Microsemi SiC Wafer Fab located in Bend, Oregon USA § Complete In-house process capability since 2007 § Current capacity of 200 wafers/week (100mm – 4 inches) § 12 Issued SiC technology patents § Over 1,000,000 SiC Schottky Diodes produced § Experienced with SiC MOSFETs, SiC Schottky Diodes, SiC SITs (JFETs) and SiC MESFETs E220 Production Implanter Hi Temp Oxidation MESFET and MOSFET Gate Oxidation Ambios AFM Surface Roughness to 1Å © 2014 Microsemi Corporation CentroTherm CHV-100 Post Implant Annealing to 1700 °C Power Matters 28 Microsemi Power Products MOSFETs (100V-1200V) Highest Performance § SiC MOSFETs (1200V 50mΩ and 80mΩ ) § MOSFETs § FREDFETs (MOSFET with fast body diode) Internal body diode § COOLMOSTM (Superjunction MOSFET) IGBTs (600V-1200V) Lowest Cost separate diode (combi) § PT (Punch-Thru) – short tail current § NPT (Non Punch-Thru) – low switching losses and easy to parallel § Field Stop – low conduction losses Diodes § SiC Schottky Diodes (650V, 1200V, and 1700V) § Si Fast Recovery Epitaxial Diodes “FRED” (200V-1200V) § Si Schottky, low VF and fast switching (200V) © 2014 Microsemi Corporation Power Matters 29 Microsemi SiC Schottky Diodes Microsemi Advantages 650V SiC Schottky Diodes Volts 650 IF(avg) Amps 10 20 30 2 x 10 VF Volts Part Number Package 1.5 APT10SCD65K TO-220 1.5 APT20SCD65K TO-220 1.5 APT30SCD65B TO-247 1.5 APT10SCD65KCT TO-220 1200 20 30 2 x 10 1.5 1.5 1.5 1.5 1.5 1.5 APT10SCD120B APT10SCD120K APT20SCD120B APT20SCD120S APT30SCD120B APT30SCD120S TO-247 TO-220 TO-247 D3 TO-247 D3 1.5 APT10SCD120BCT TO-247 1700V SiC Schottky Diodes 1700 10 1.5 APT10SCE170B leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors’ spin on passivation applied post wafer fab. Patented Technology 1200V SiC Schottky Diodes 10 Superior Passivation Technology TO-247 Junction barrier structure has a lower VF than any equivalent die size (due to larger Schottky area and buried P-Wells). Microsemi SiC Wafer Fab SiC MOSETs are Designed and Manufactured at Microsemi’s SiC Wafer Fab in Bend, Oregon. Future products 650V, 1200V, and 1700V 20A & 50A single chip design © 2014 Microsemi Corporation Power Matters 30 Microsemi SiC MOSFETs Voltage Current 40A RDS(ON) 80mΩ Part Number Package APT40SM120B TO-247 APT40SM120S D3 APT40SM120J 1200V 50A 50mΩ (32A) SOT-227 APT50SM120B TO-247 APT50SM120S D3 APT50SM120J (37A) Availability Available Now SOT-227 700V 65A 30mΩ TBD TBD November 2014 1200V 20A 160mΩ TBD TBD December 2014 1200V 80A 40mΩ TBD TBD December 2014 1200V 100A 25mΩ TBD TBD December 2014 1700V 20A 120mΩ TBD TBD March 2015 Microsemi Advantages • Best in class RDS(ON) vs. Temperature • Low Switching Losses • Low Conduction Losses • Short Circuit Withstand Rated • Superior Stability • Microsemi patented SiC MOSFETs © 2014 Microsemi Corporation Power Matters 31 SiC Standard Power Module - Product Offering § SiC Mosfet + SiC diodes SiC power modules advantages ü 3-Level ü Phase leg ü PFC • High speed switching • Low switching losses • Low input capacitance • Low drive requirements • Low profile • Minimum parasitic inductance • Lower system cost • Increased reliability § SiC diodes ü Dual diode ü Full bridge § IGBT + SiC diodes ü Boost chopper ü Dual Boost chopper ü 3-Level § Mosfet/CoolMos + SiC diodes ü ü ü ü ü Boost/Buck chopper Single switch Phase leg Full bridge 3-phase bridge Optional material assembly AlN substrate Al2O3 substrate Copper base plate AlSiC base plate Custom product capabilities Modules designed for high frequency, high performance, high density and energy saving power systems © 2014 Microsemi Corporation Power Matters 32 Microsemi SiC Power Modules NEW PRODUCTS Low Profile and Industry standard packages Great design flexibility to offer modified versions! Technology Topology Voltage Current Tc=80°C Rdson max. per switch Tj=25°C Package - Height APTMC120TAM12CTPAG 3-Phase leg + Parallel diode 1200V 150A 12mΩ SP6P – 12mm APTMC120TAM17CTPAG 3-Phase leg + Parallel diode 1200V 100A 17mΩ SP6P – 12mm APTMC120TAM33CTPAG 3-Phase leg + Parallel diode 1200V 60A 33mΩ SP6P – 12mm APTMC120AM25CT3AG Phase Leg + Parallel diode 1200V 80A 25mΩ SP3 – 12mm APTMC120AM16CD3AG Phase Leg + Parallel diode 1200V 100A 16mΩ D3 – 30mm APTMC120AM12CT3AG Phase Leg + Parallel diode 1200V 150A 12mΩ SP3 – 12mm APTMC120AM09CT3AG Phase Leg + Parallel diode 1200V 200A 9mΩ SP3 – 12mm APTMC170AM60CT1AG Phase Leg + Parallel diode 1700V 40A 60mΩ SP1 – 12mm APTMC170AM30CT1AG Phase Leg + Parallel diode 1700V 80A 60mΩ SP1 – 12mm SP1 SP3 © 2014 Microsemi Corporation SP6P D3 Power Matters 33 Summary – Microsemi SiC MOSFETs Microsemi’s Best-in-Class SiC MOSFETs enable customers to design ultra efficient high power electronics Microsemi Advantages • • • • • • • Best-in-class RDS(ON) vs. Temperature Ultra Low Gate Resistance Low Conduction Losses Low Switching Losses Short Circuit Withstand Rated Reliable Technology Platform Discrete and Power module © 2014 Microsemi Corporation Power Matters 34 © 2014 Microsemi Corporation Power Matters 35
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