the f
rst explain
), let us fi
(1
n
o
ti
a
u
n of eq
a for the
e derivatio
See Fig. 4
th
.
R
r
o
s
F
iu
.
d
ts
ra
en
n the
n of
tical argum
rical regio
ection. Whe
the theore
g the y dir
in a cylind
n
d
lo
te
a
a
Details of
lu
rm
a
o
line ev
clination
ne unif
isclination
r to the dis
clination li
d
is
la
e
d
u
th
ic
ht
f
d
o
ig
en
y
ra
energ
ane perp
der a st
in the
. We consi
ing on a pl
interested
ector n ly
f the system
ir
o
d
e
ry
th
et
ow we are
h
m
N
it
w
z.
geo
n
d
o
n
ti
a
a
corporated
n of x
disclin
e can be in
is a wedge
is a functio
m
?
n
u
o
ss
re
ti
a
a
he
e
oo
in
w
w
cl
s∂),
dis
which
(sin∂, 0, co
ation line,
e that ∂ is
plane), n =
f a disclin
z
o
y
x–
g
n
er
(a
en
rther assum
e
e
fu
lin
th
e
n
W
o
s.
n
xi
o
ormati
the z a
, cos∂). The
e twist def
, sin∂ sin∂
of n along
th
s∂
n
f
o
o
co
ti
∂
ct
ta
in
fe
ro
(s
ef
the
n =
describing
be given by
variable ∂
r field can
to
ec
ir
d
by a single
e
of
, th
assumption
nd z. Then
t of x, y a
simplifying
e
th
er
d
n
independen
u
,
sity f Frank
-energy den
Frank free
= K, is
K11 = K33
(3)
/∂z)^2}},
1/2 that
∂y)^2}+{(∂
/
∂
{(
K{
2)
/
f strength
o
(1
e
=
n
li
n
o
f Frank
clinati
lving a dis
tegration
lution invo
so
r
ia
il
being an in
m
h
it
fa
w
A
x)
).
/
∂
(z
arctan
ngth is then
2/K)sin^2
per unit le
∂=∂0+(1/2)
cos^2∂+(K2
e
is
√(
n
li
X/
=
n
o
X’
ti
h
a
wit
y ∫drf Frank
disclin
astic energ
ergy of a
e Frank el
he free en
th
T
1.
es
^iz
2)
im
z^
min
=(K/8)(x^2+
nd thus f Frank
a
t,
n
a
st
n
co
as
expressed
産総研 ナノシステム研究部門
Nanosystem Research Institute
October, 2014
+sin^2x}
K)sin^2∂)}^2
2/
K2
+(
2∂
s^
(4)
osX/√co
dr∫dx{2/(c
),
{∫
∂
8
^2
K/
n
si
c+
E
K)
=
k22/
√(cos^2∂+(
Edisclination
4)ln(R/rc)}
r with a
= Ec+{(πK/
nX, togethe
nd z = r si
a
sX
co
r
x =
of variables
sformation
n
a
tr
f n is
a
d
ce
in terms o
rder of K
ve introdu
c, of the o
onal order
E
ti
n
ta
o
en
ti
where we ha
u
ri
o
ib
ntr
of the
rc. The co
description
c cut-off
which the
in
microscopi
rc
<
r
gion
on is not
from the re
e disclinati
es
th
m
n
co
he
,
W
1)
.
(ref.
h ac0.1
xis is Ω
c = ack wit
nd the y a
lid.
and thus E
va
,
1)
er
.
g
n
ef
(r
lo
clination a
is
0
d
no
)1
e
rc
th
/
n
(R
betwee
ection is
rest, ln
)groove dir
of our inte
d the angle
4
n
a
se
)(
)
4
ca
n
)(
o
e
(3
ti
th
In
t
ng the
ve direc
length alo
axis, is ∂ a
axis (groo
and the x
e per unit
n
long the y
n
a
li
n
n
d
o
ee
te
ti
tw
a
en
be
ri
o
isclin
ngle
gy of the d
of n, the a
e free ener
thal angle
th
u
m
),
zi
1f
a
.
e
ig
th
(F
n
reover, whe
/cosΩ. Mo
Edisclination
∂. Thus,
, ∂ = Ω +
(5)
the bottom
cosΩ,
n^2(Ω+∂))}/
si
K)
/
22
(K
Ω+∂)+
the
ac+√(cos^2(
e form of
/cosΩ = K{
n
o
ti
here that th
a
te
o
n
Edisclin
e
W
lia et
on (1).
use Buscag
tal, equati
This is beca
term of Eto
t
).
rs
(4
fi
n
e
o
th
ti
on,
, equa
yielding
our notati
t from ours
4)ln(R/rc),
ination; in
is differen
cl
is
29
d
with K=(πK/
f.
a
re
d
n
arou
the
esented in
ofile of n
e profile to
n energy pr
n for the pr
applied th
io
d
pt
n
disclinatio
a
m
,
u
3
ss
a
K3
K22 =
plifying
when K11 =
an oversim
valid only
,
al.29 made
x)
/
(z
n
/2)arcta
yed ∂ = (1
they emplo
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K22≠K33.
ion contain
ses of K11≠
drical reg
n
ca
li
l
a
cy
er
e
th
en
g
low
of
istortion be
in an area
the twist d
is present
to
e
e
er
u
th
d
n
y
g
io
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ove bottom
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ro
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In the eva
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cr
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it
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ro
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e
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A at a cro
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o
t
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uthal angle
rface anch
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The Nanosystem Research Institute (NRI) is a key research unit, having nanotechnology and
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ナノシステム研究部門の概要
Introduction
ナノシステム研究部門長 山口 智彦
Dr. Tomohiko YAMAGUCHI Director, Nanosystem Research Institute
2014.04.15
t
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ナノシステム研究部門の研究戦略
RESEARCH STRATEGY of NRI
PEN
ISSN 2185 - 3231
PEN October 2014
社 会
1
グリーンシステム
Green System
SOCIETY
（燃料電池、太陽電池）
(Fuel Cell, Photovoltaic Cell)
ソフトシステム
Soft System
（再生医療・予防診断）
(Tissue Engineering, Preventive Diagnosis)
オープンイノベーション
OPEN INNOVATION
ＩＴシステム
IT System
（ナノ構造エレクトロニクス）
(Nanostructured Electronics)
テクノロジーブリッジ
Technology Bridge
（理論・シミュレーション、計測、ナノ安全）
行政
（Theory/Simulation, Characterization, Nano Safety)
産総研
AIST
大学
企業
ナノシステム
研究部門 (NRI)
他ユニット
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ini
r
l
e
l
t
a
f
s a
よって、必要な材料を必要なだけ作る（オンデマンド）新規微粒子合成プロセ cryst
fi lm
o
g
n
i
r
l
ca
orde
ologi
re
n
i
a
図
：
Cu-Au
合金ナノ粒子の気相中熱酸化によって、
Au-Cu(
金属
)
y
s
スを開発しています。
t
i
m
l
l
mobi
PSS fi
,
d
e
r
l
ca
explo
と Cu2O( 半導体 ) がヘテロ接合した均一ナノ粒子
ologi
in
erent
f
f
ensity
i
d
d
h
y,
l
al
g
n
n
o
i
We
are
developing
original
physical
processes
using
plasmas,
lasers
and
surface
i
s
ri
oport
] Surp
i
l
i
b
d
o
an
activities to produce novel fine particle materials. These processes enable the the m
ction
e
h
g
d
u
r
o
e
th
rri
re, al
production of just the necessary quantity of necessary materials 'On Demand'. ca h mak
lm
the fi
ic
g
h
n
i
w
in
n
Figure: Homogeneous nano-heterojunctions between Au-Cu(metal) and Cu2O
nd
a
ventio
,
n
n
o
c
o
ati
te
rier
a
r
r
a
t
c
s
he
(semiconductor) formed by thermal oxidation of Cu-Au nano-particles in gas phase. emon
ver, t
e use
n
e
can b
be
r
e
i
r
the r
r
a
tting
high c
per,
a
this p
rsely
g
n
i
r
e gl
u
n
s
ea
ナノ材料、ナノ粒子を、幅広い産業分野に応用していくため、オンデマンド・連
ethyle
ore m
igh
h
al
e
c
h
i
. T
electr
nging
続製造プロセスの開発を行っています。圧力による相や物性の制御、マイクロ流
,
rp
d
l
o
e
m
fi
basis
ctric
路などのコア技術を駆使して、必要なときに、必要な性質を持つ、必要な量のナde angle
wi
ting
al.
ng-in
ノ材料・ナノ粒子を作るプロセスの構築、およびそれらを用いた機能性部材、デ
t
e
a
grazi
hit
y
p
o
c
s
XS). T
o
バイスへの応用に取り組んでいます。 図：柔軟な耐熱ナノコンポジット断熱材
(GISA
pectr
fi
y
b
y
d by
t
i
studie
mobil
We
have
developed
chemical
processes
for
synthesis
of
a
variety
of
n
situ
I
n
6 ]
with i
s. [ 1
nanomaterials
and
nanoparticles
using
high
pressure
fluids,
micro-fluidic
f
l
e sho
o
ion g
dition
technology
and
chemical
engineering
techniques.
Our
researches
include
intro
could
se the
e
h
on-demand
synthesis,
continuous
mass
production
and
device
development
t
ansist
n
the tr
PSS, o
s
e
c
n
e
of
functional
materials.
T:PSS
id
PEDO
g-inc
t
i
v
i
t
c
Figure: Flexible and heat-resistant nanocomposite thermal insulator.
u
nd
cond
XD) a
f
ng
i
ased
r
e
e
r
t
c
t
in
ca
c
n
o
c
e
r
er
highe
ties w
ed
3
n
i
[
b
.
m
s
o
result
tors c
y
ナノ構造をベースに、人が扱うスケールまでを一貫して設計・構築する「ナノシステム」
since
sed b
,
u
y
a
p
c
o
is
osc
n
o
h
c
i
n
h
o
i
w
による、環境・エネルギー問題解決への貢献を目指しています。放射性セシウム除染
addit
tance
f
rs in
rns o
e
i
e
r
t
t
r
a
a
では、選択的にセシウムを吸着するナノ粒子を開発し、実証プラントによる汚染灰除
p
c
q
e
h
t
along
to the
染試験を進めています。また、電気的に色変化するナノ粒子インクの開発に基づき、
s
n
o
i
t
c
diffra
cal 0
t
c
ion
t
a
環境
・
省エネへの貢献を目的として、
電子ペーパーや調光ガラスの開発も進めています。
r
a
f
r
t
f
i
oncen
The d
at
y
n
l
o
t
i
h
t
c
lig
We are developing the Nanosystem based on the design and construction of
diffra
sed s
ain s
orted
h
p
c
e
r
r
e
t
y
structures
extending
from
nanoto
human-scale,
to
solve
various
environment/energy
in
usl
ys
ion
t
a
r
t
e
h cr
oncen
problems. In the issue of the radioactive-cesium decontamination, we have developed
that t
y
b
d
e
as
incre
of EG
nanoparticles for cesium-uptake, and constructed a test-plant. The R&D of
XD
f
l
A
a
W
t
I
a
G
width
he 2D
electronic-paper and color-switchable windows is also promoted by the development
n
色可変素子
ans
y Riv
e scセシウム吸着材
b
n
i
l
d
e
t
d
d inks of color-switchable
le
Cs-adsorbent
Color-switchable
device neof
nanoparticles
using
repor
esting
s printing/coating
ll technologies.
n
ne.
– π
i
g
fi
a
s
r
u
o
l
e
g
l
f
a
a
l
w
π
u
d
a
e
a
,
s
e
(
l
e
t
s
l
h
s
. C
ered
l siz
stals
gnal,
ction
e cry
e wel
rom t
ation
ly ord
crysta
T cry
s wer
ger si
ion f
nd th
refl e
weak
PEDO
fi lm
at PE
stron
culat
020)
erage
s
PSS, a
h
l
(
e
i
v
t
h
a
h
a
t
a
d
e
t
c
g
o
m
s
e
d
e
f
t
b
e
n
n
e
e
t
u
at
mplyi
itativ
ted th
tion o
e inte
is sys
istrib
i
roduc
t
a
r
c
h
p
d
,
n
t
c
e
o
s
i
a
i
y
at th
e
m
d
u
l
G
x
s
fl
n
m
xy a
wed Institute October,
nd th
ith E
the q
Nanosystem
Research
2014 04
becau
eak i
20) re
rando
the q
ing, a
lms w
G sho
per p
hough
he (0
k
iable
E
h
r
t
t
f
l
c
fi
t
l
a
i
e
h
a
a
h
t
r
S
m
w
p
i
s
S
s
,
o
t
o
ne o
fr
ed
he
s w
on
T:P
ion
rose
d pla
mpar
fi lm
ed. T
PEDO
y be n
solut
face-
グリーンシステム GREEN SYSTEM
電気化学界面シミュレーショングループ グループ長 : 中西 毅 / Electrochemical Interface Simulation Group Leader : Dr. Takeshi NAKANISHI
フィジカルナノプロセスグループ グループ長 : 川口建二 / Physical Nano-Process Group Leader : Dr. Kenji KAWAGUCHI
ナノケミカルプロセスグループ グループ長 : 依田 智 / Nano Chemical Process Group Leader : Dr. Satoshi YODA
グリーンテクノロジー研究グループ グループ長 : 川本 徹 / Green Technology Research Group Leader : Dr. Tohru KAWAMOTO
c
s
e
y
er
rgani
uctor
er
] Pol
ecaus
g lay
ate)
tia
and o
icond
l fon
rest b
polym
xible,
portin
s. [ 1
)
m
u
e
e
s
s
e
t
s
e
g
n
c
D
s
e
poten
n
i
n
fl
i
a
E
i
n
v
r
s
c
t
L
e
i
e
t
c
se
of it
es (O
ically
nic d
holey styr
ondu
e
Organ
d
n
l
inten
o
c
s
t
o
ra
a
r
o
i
u
t
n
t
h
d
d
a
:p
d
c
a
c
e
e
)
n
c
t
t
e
d be
studi
in me
itting
and i
phene
impor
ive el
attrac
most
V), an
l use
vices
ht-em
y thio
xpens
have
is an
P
a
so
e
e
g
x
e
i
O
i
t
h
t
d
o
(
n
l
i
t
d
i
i
n
n
e
seco
ir pot
of the
e
d
d
i
n
x
a
o
sulf
eight,
lightw
e
c
d
n
e
enha
thylen
3,4-e
miz
is
)
S
S
nopti
o
:P
T
(PEDO
yin
e
l
s
r
u
e
und
beca
system
ol
s
o
c
ganic
当グループでは温度差や電位差が与えられた物質の状態を高精度に記述する手法 the s a
in or
Thermoelectric
Voltage
e
s
i
c
i
stud
volta
を開発しつつ、この手法をエネルギー産業やエレクトロニクス産業で使われる材
photo
tan
tric
c
e
mpor
l
i
e
o
therm
r a
e
料のモデリングに適用します。例えば、排熱の再生利用を目指すデバイスや低消
a
h
furt
dding
Film Material
2 ] A
unt
o
c
費電力で高速の次世代メモリなどに使用される材料を対象とします。
PSS
hyl
dimet
dis
e
y
l
b
ll
atica
図：二端子熱電素子における熱起電力やフォノン熱伝導度の第一原理シミュレーション sta lems
dram
prob
ed
ublish
We develop accurate methods to describe the state of matters exposed to
ort
the Hot
Cold
,
S
ransp
S
t
:P
T
PEDO
ex
w
s
o
differences
in
temperature
and/or
electric
potential.
We
also
apply
the
methods
e
h
i
carr
stood
under
S
:P
T
O
to
materials
used
in
the
energy
and
electronics
industries
such
as
devices
for
PED
ology
n
Morph
e
v
l
o
utilization of waste heat and next-generation high speed memories with low
co-s
ally
critic
a
r
u
t
c
power consumption. Figure :First-principles simulation of thermoelectric effects and stru
ring
explo
ca
Thermal Current
f the
o
s
phonon
thermal conductance of two-terminal devices.
s
signifi
e
c
An ex
a
d
e
e
t
k
r
repo
to ma
order
a b
tes
a
e
pectr
r
s
c
S
of PS
s i
e
g
chan
r
e
carrie
d
o
n
n
a
a
当グループでは、炭素系ナノ物質 (CNT、グラフェン、生体分子など ) の特性をシ Tak
phous
amor
t
e
v
r
ミュレーションによって研究します。例えば、新しい実験技術である He イオン obse
ne
l
pristi
f
lid fi
o
n
o
i
顕微鏡 (HIM) でグラフェンの構造評価をすると、図のようなグラフェン格子像が so holo
addit
e
p
h
mor
e in t
chang
得られるものと予測されます。また、フェムト秒レーザーを用いたグラフェン加 EDOT:PS
ty is
i
v
i
P
t
c
u
cond
holo
l.
工技術のシミュレーションによる研究開発で企業との連携が始まっています。
morp
g et a
n
a
y
u
O
gh d
u
thro
aman
Our group explores the frontier of carbon nano-materials such as CNT,
the R
o
t
] S
d
5
e
t
11–1
グラフェンの格子構造 ( 左 ) と
ttribu
graphene, bio-molecules by simulation. We predict that He ion microscopy
be a
tio
c
a
]
r
diff
HIM 像のシミュレーション ( 右 )
T. [ 5
(HIM), a newly developed experimental tool, can monitor the graphene lattice
PEDO
e,
r
u
o
t
t
c
stru
ction
graphene (left) and
as
displayed
in
the
figure.
We
also
collaborate
with
companies
by
joining
a
diffra
n
i
n
i
m
s
r
l
dete
crysta
simulated
HIM image (right)
nano
,
technology research association for the development of graphene fabrication
tio
wever
o
rienta
H
o
.
d
adde
r
e
technology
using
a
femtosecond
laser.
v
o
More
uctive
cond
e
b
t
y
l
n
hard
iffere
g
and d
i
h
e
t
h
n
of t
opme
devel
e
s
r
e
[
v
.
is in
aches
当グループでは、優れた特性をもつカーボンナノチューブ (CNT) を用いた電子デ
appro
ore
heref
t
y
a
r
2D Xm
ngi
l
バイスの実現を目指し、CNT
の分散技術、分離技術、デバイス開発の研究を行っ
e
l
fi
chal
T:PSS
PEDO
ctr
e
l
e
ています。ゲルを用いたカラムで金属型と半導体型の CNT を分離し、さらに、 the
d for
metho
tin
a
c
i
ular
温度をコントロールすることで非常に簡便に単一構造の半導体型 CNT が得られ fabr hit
molec
le.
a
s
c
a
s
Yam
meter
るようになりました ( 図 )。今後、新規 CNT デバイスの実用化を目指します。
nano
pe
e
v
R–UV
a
I
h
s
fi lm
e
m
s
u
r
a
e
i
c
Toward the practical use of carbon nanotube (CNT) having superior properties,
carr
bly be
proba
. [
ltage単一構造半導体型 CNT 溶液と
o
we
are
developing
dispersion
and
structure
sorting
technologies
and
electronic
odels
v
l
m
l
a
The H
it
;
その分子模型
d
y
t
d
i
s
a
devices. We have separated metallic and semiconducting CNTs and even
the
r den
sSolutions of single-chirality
carrie
i
e
t
s
c
a
e
e
incr
isolated single-chirality (structure) semiconducting CNTs using
ll eff
s
the Ha
:PS
creen semiconducting CNTs and their
s
EDOT
S
P
S
temperature-controlled gel chromatography (Figure). Hereafter we will try to
:P
EDOT
molecular
models
g-i
r
n
o
i
f
graz
table
realize novel CNT devices.
unsui
XD)
.
s
A
r
o
(GIW
ansist
lm tr
ca
s
d
y
n
X-ra
ertz a
terah
ies
t
r
e
e
h
t
prop
mine
deter
or
t
s
i
s
当グループでは、ナノ領域に閉じ込められた光や電子の新規な特性を発現させる tran
etical
theor
c
y
s
h
o
r
w
t
Plane LED
Ridge LED
ec
asons
ため、ナノ構造を最適に設計・製造する技術を開発し、例えば高効率 LED のよう sp citan
the re
y
l
capa
cant
signifi
な高機能光デバイスや真っ暗闇でカラー撮影が可能な暗視カメラを開発していま harge ca
ty of
i
v
i
c
t
c
u
cond
g
す。また、その評価のため高機能電子顕微鏡や近接場光プローブ顕微鏡などを基 added to
s usin
e
i
d
u
t
s
ical
electr
盤として、さらに局所プラズマを利用した新規評価技術も開発しています。
ction
diffra
o
G
e
the E
-angl
リッジ
We
design
and
fabricate
optimum
nano-structures
to
apply
novel
characteristics
t
d
small
r
e
s
o
a
p
s
e
decr
r tran
500nm
of electrons and photons confined in these structures, and aim to develop
carrie
ly
s
u
o
i
prev
el
600nm higher performance opto and electronic devices, such as high efficiency LEDs
ion-g
o
R
I
he EG
N
t
–
s
UV–vi
f
and
a
novel
color
night-vision
system.
To
accelerate
the
research,
we
also
o
SEM
Image
t
c
通常の LED( 左 )
effe
c
f
specifi
o
e
develop
high
performance
electron
microscopy,
probe
microscopy
and
a
new
h
y
t
t
より明るく発光するリッジ構造
LED(
右
)
i
s
show
r den
highe
Bright emissionifrom
iled
characterization
method
using
ith local plasma.
s
on
w
EG
hen
g ridge-structured
the
ALED
t
y
t
n
,b
f
.
t
d
n
i
a
o
r
d
d
. Deta
e
v
n
u
n
i
t
t
o
1
y
a
s
t
s
a
h
n
derst
nduc
ctivel
igure
consi
− 1 ,
y mea
amou
e met
n
e
o
F
b
b
p
c
u
e
.
s
m
r
o
atio
t
l
d
r
e
e
c
o
u
m
r
e
a
p
w
T
z
EG,
Infor
four830 S
ectric
ried o
ptimi
vent.
tions
th 3%
rting
e car
a sol
the el
serva
ional
i
was o
− 1 to
r
t
o
b
w
t b
f
e
y
p
n
o
l
a
o
p
w
e
m
d
h
n
u
e
v
c
t
s
n
o
s
the S
sted
dence
1.2 S
a con
tudie
. The
EG a
G is
S2 in
sugge
hout
from
Research
2014
depen
use E
re S1)Institute October,
SAXS s
using 05 Nanosystem
t
e
a
I
u
an
i
1
r
e
d
r
c
g
w
u
h
−
i
e
G
e
t
s
g
o
b
F
s
i
a
ed t
in F
.85 Å
fi lm
tion,
D and
logy,
t that
incre
q = 1
assign
IWAX
T:PSS
expec
shown
orpho
forma
3%, σ
s
O
d
o
G
n
m
r
a
e
o
D
n
I
,
r
t
a
w
a
E
y
a
m
P
g
e
g
1
− 1
lo
− 1
fi l
abl
rtin
ing
Å −
tion
orpho
eason
n the
Suppo
1.85
1.28 Å
direc
1.28 Å
stand
I T システム INFORMATION TECHNOLOGY SYSTEM
非平衡材料シミュレーショングループ グループ長 : 宮崎剛英 / Nonequilibrium Materials Simulation Group Leader : Dr. Takehide MIYAZAKI
ナノ炭素材料シミュレーショングループ グループ長 : 宮本良之 / Nano Carbon Materials Simulation Group Leader : Dr. Yoshiyuki MIYAMOTO
ナノ炭素材料研究グループ グループ長 : 田中丈士 / Carbon Nanomaterials Research Group Leader : Dr. Takeshi TANAKA
ナノ光電子応用研究グループ グループ長 : 池上敬一 ( 兼 ) / Nano Optoelectronics Research Group Leader : Dr. Kei-ichi IKEGAMI(Acting)
en
re
or
f
in
ve be
des. [
ell
sity a
ility.
(EG)
l use
vity o
S can
ies ha
not w
entia
g den
ducti
lectro
r mob
lycol
d
OT:PS
e
n
n
e
s
g
i
u
D
i
i
o
t
t
p
r
E
c
s
e
t
r
n
nd fo
o
i
P
n
e
a
l
a
,
erous
trica
the c
:PSS,
and d
nspar
ethyle
cally
on of
c
T
m
t
i
e
y
s
s
c
u
O
l
t
fi
r
i
a
e
i
e
D
n
l
e
f
c
i
E
n tra
e
p
f
h
s
P
ough
] Spe
, suc
devic
ve the
hus a
r mob
us di
y of
lvent
5 , 6
] Alth
ctric
and t
impro
ctivit
carrie
[
aqueo
e
u
4
l
y
o
.
e
d
e
,
t
n
g
r
h
n
o
t
a
o
a
nd so
s
3
l
yn
o
) to
therm
ts of
ot cle
orpho
dition
DOT s
ivity.[
the c
(DMSO
s for
ll n
lm m
remen
ving
in PE
s con
i
nduct
a
s
u
t
o
o
s
e
s
r
fi
d
h
a
c
p
e
l
c
e
e
e
s
o
a
oxide
u
r
u
s
im
m
th
a
pr
er, a
ctric
Howev
ts ele
nce i
holog
the
morp
zing
s
ptimi
se it
anism
becau
g ech
erlyin
nge
a
studi
h
c
y
Earl
vents
cosol
1.6
iable
当グループでは、ナノ構造・界面に関する理論を構築し、解析技術を向上させ、amorphous
d rel
ies an
a sma
1.7
only
高効率な光・電子デバイスを実現するための機能設計と特性解析を行っています。
t in
n
a
t
CT2
r
h
,
o
ugh t
tions
1.5
altho
1.6
pplica
主な研究対象は有機薄膜太陽電池材料、有機半導体材料、高機能高分子材料、分
her a
ved.
is
impro
erion
count
1.5
子光機能材料、半導体光触媒、炭素系ナノデバイス、自己集積化有機ナノ構造体
.
es ind
n
g
o
ersi
chan
1.4
e disp
s
lvent
1.4
です。 図：光誘起相転移を示す断熱ポテンシャルエネルギー面
co-so
for
i
lems
rmat
s,
tudie
confo
We are developing theories for nanoscale materials and interfaces to design
e.
sports
rg
a
otron
h
r
c
1.0
cess
synch
ies ex
e
opto-electrical and electronic devices with high efficiency. The subjects include
DOT
ms ar 0.8
of PE
S fi l
0.6
OT:PS
0
s
e
vents
s
organic
solar
cells,
functional
polymers,
photo-functional
materials,
nano-carbon
l
u
0.02
s座標 0.4
ts ca
co-so
0.04
olven
0.2
s of t
0.06
er,
devices and self-assembled organic nanostructures.
studie
l ord
0.08
0
d座標(Å)
ctura
ery li
tly
Figure: Adiabatic potential energy surface showing a photoinduced phase transition. still v
Final
state
Initial
state
fi can
ls hav
he
mode
that t
rted
g
ental
addin
xperim
l
tra by
ain
are a
the ch
there
ges in
s
ring
used
t al.
scatte
ano e
onNd
磁性材料・超伝導材料・強誘電／圧電材料などを構成する機能性物質では、しば
i
t
B
a
a pow
m
s
e for
this i
rve th
しば電子相関がその特異物性発現の を握ることがあります。当グループでは、 stallinity
ter
cry
ms af
l
fi
d
第一原理電子状態計算のような計算科学的手法により、このような物質・材料をrdering on
l
a
c
i
g
o
pholo
e
対象として、必要な手法・プログラムの開発・整備を行ないながら、応用研究を
ity in
ms ar
mobil
S fi l
OT:PS
Fe
r
進めていきます。現在は、高性能永久磁石材料研究に、特に注力しています。 explo ed, wh
gical
E
pholo
nt
ty in
図：ネオジム磁石中の電子スピン密度の計算結果
iffere
densi
t
ugh d
,
ngly
ional
For several functional materials such as magnetic, superconducting or
rprisi
oport
5 ] Su
y
lit
ferroelectric/piezoelectric ones, electronic correlation plays an important role in the the mobi s
n and
actio
en
h
g
d
u
r
o
emergence of their specific properties. We investigate these materials by means of carrie
, alth
cture
lm
kes
fi
a
m
e
ng th
computational methods such as first-principles calculations, developing required which
rmini
a
d
ntion
n, an
conve
computational
techniques
and
programs.
Currently,
we
focus
on
high-performance
r
ntatio
d
rrie
strate
the ca
emon
permanent magnets. Figure: Calculated electronic spin density in Nd2Fe14B.
over,
d
e use
n
can b
ly bee
s
e
r
r
e
e
i
r
h
t
h car
tting
he hig
w
aper,
ly
this p
verse
y
g
n
i
r
u
ne gl
meas
当グループは、テクノロジーブリッジとしての役割を果たすため、ナノ領域の構
ethyle
h
efore
he hig
ical
ng. T
electr
造・物性・機能を明らかにする各種計測法の高度化とともに、システム化段階に
lengi
ho
,
d
l
e
morp
ic fi
basis
electr
対応した応用を進めています。例として、高強度パルス光の極短時間照射により、e angle X
g
wid
catin
cid
al.
ng-in
プラスチック基材にダメージを与えずに無電解めっきの密着性を向上させる研究
t
e
a
grazi
ashit
h
opy
XS). T
ctrosc
に取り組んでいます。
図：PET
フィルム上に作製した金めっき微細パターン
GISA
(
V pe
us
by fi
d by
bility
studie
er mo
We are developing not only advanced techniques to measure nano-scale
n
n situ
16 ] I
with i
els. [
w
structures
and
properties
but
also
applications
to
deal
with
the
systematization
f
el sho
ion o
ion g
addit
rod
t
stage,
in
order
to
play
a
role
as
the
Technology-Bridge.
For
example,
we
have
n
i
the
could
r
ease
developed
etchingless,
electroless
plating
processes
that
can
produce
metal
nsisto
the
n
o
,
S
he tra
S
t
:P
T
O
so
ce
thin films with strong adhesion to various polymer films.
T:PSS
ciden
PEDO
ing-in
y,
t
i
v
i
t
Figure: High-resolution patterning of gold electroless plating formed on a PET film. conduc
) and
D
X
A
W
fro
g
ased
tterin
incre
n
y sca
conce
were
igher
h
erties
,
bined
s. [ 3
s com
result
sistor
y c
e
c
当グループでは、錯体分子、導電性高分子、ナノワイヤー、ナノギャップなど特
n
i
sed b
py, s
is cau
rosco
n t
ich
ion o
異なナノ構造が発現するアクティブな性質を利用した熱電素子、不揮発性メモリ
ce wh
addit
citan
f th
in
rns o
rriers
などの新規デバイスの開発に取り組んでいます。写真は有機熱電素子 ( 左 ) とそ
patte
ge ca
z
he q
the
ong t
l
a
ed to
のモジュール ( 右 ) です。高い熱電変換性能を持つ導電性高分子 PEDOT:PSS を利 ctions a
0
diffra
rical
用した熱電素子を組み上げることでモジュール化に成功しました。
ractio
ration
t
n
e
c
e diff
n
h
o
T
G
t
E
at
ly a
ction
slight
In our research group, we develop electronic devices such as thermoelectric (TE)
diffra
eased
a
ted
ain st
repor
terch
conversion
devices
and
non-volatile
memories,
using
metal-complex
molecules,
n
i
ously
t
s a
ration
e cry
ncent
conductive polymers, inorganic nanowires, and metal nanogaps. Furthermore,that th
a
熱電素子 ( 左 ) とそのモジュール ( 右 )
EG o
ed by
EG
creas
n
i
we
aim
to
create
new
types
of
active
organic/inorganic
hybrid
devices
by
fusion
Thermoelectric
Conversion
Device
(left)
m
ct of
XD
lfGIWA
h at a
the 2D
and
of these materials. The picture shows our organic TE device and module. We widt y Rivna
ns Module (right)
a
c
s
line
d b
d
ting highly
ailed
neassembled
e.
PEDOT:PSS
films.ed, as reporte s along
s
– πTE module
gesusing
sugby
e full
( π the
lear
-defi
e waordered
tallin
l
h
s
,
z
C
s
t
l
i
l
y
l
r
e
s
.
r
a
on
a
e
i
c
n
w
m
t
l
n
t
s
e
n fro
fl ec
matio
er sig
ly ord
d the
crysta
T cry
s wer
EDO
weak
20) re
ulatio
trong
PEDO
rage
SS, an
fi lm
s
c
0
e
s
P
l
(
e
i
v
that P
h
a
h
a
t
a
d
e
t
c
g
o
m
s
e
d
e
f
t
e
n
n
e
e
h
t
i
u
o
e
v
t
c
s
y
b
t
i
y
l
u
i
t
n
n
s
r
d
p
hat b
i
a
d
t
o
e
t
i
s
t
ore
is, im
y dis
at the
uanti
G pro
se thi Research
fl ect
ndica
doml
xy ax
wed m
nd th
the q
Nanosystem
Institute October,
2014 06
o
a
with E
becau
eak i
q
20) re
h
h
,
p
s
0
s
g
e
e
g
(
l
r
u
h
m
n
o ran
b
h
t
e
o
i
e
l
relia
m th
with
pack
ith EG
sharp
SS fi
s of t
, alth
ared
e-on
e not
se fro
lms w
plane
DOT:P
. The
p
lution
b
c
E
d
a
o
d
m
fi
e
P
y
s
f
e
o
v
a
t
e
e
c
r
e
o
d
1 aro
th
Th
ye
) m
uga
T c
xis
mpr
] Th
PEDO
-conj
displa
q z a
[ 17 ]
(FWHM
EG to
was i
[ 10
テクノロジーブリッジ TECHNOLOGY BRIDGE
光励起
励起エネルギー(eV)
ナノ理論グループ グループ長 : 関 和彦 / Nanoscale Theory Group Leader : Dr. Kazuhiko SEKI
相関材料シミュレーショングループ グループ長 : 石橋章司 / Correlated Materials Simulation Group Leader : Dr. Shoji ISHIBASHI
ナノシステム計測グループ グループ長 : 久保利隆 / Nanosystem Characterization Group Leader : Dr. Toshitaka KUBO
ナノ構造アクティブデバイスグループ グループ長 : 石田敬雄 / Nanostructured Active Devices Group Leader: Dr. Takao ISHIDA
o
poly
porti
s. [
) an
tent
ul fo
erest
exibl
semic
evice
trans
cting
renes
its po
OLEDs
ly fl
se int
ganic
nic d
holeondu
e of
des (
nical
ly sty
inten
o
c
s
t
o
a
r
o
i
u
n
t
h
d
d
a
:p
d
c
a
c
e
e
)
c
t
t
e
e
i
in t
e
g
l
d
trac
nd be
impor
ophen
sive e
e in m
mittin
s and
st stu
ve at
is an
PV), a
evice
e mo
ght-e
xy thi
expen
ial us
O
i
t
h
t
d
o
(
n
l
i
t
d
i
i
n
e
t
o
po
sec n
their
d
i
n
x
a
o
,
sulf
ight
ghtwe
c
d
n
e
a
enh
ylen
4-eth
m
S) is
S
nopti
o
:P
T
EDO
y
e
l
s
r
u
e
a
und
bec
stem
s
o
c
ic
触媒反応から、表面構造、自己組織分子集合体、さらに粗視化に基づくマクロ連 the s
organ
aics
t
l
studie
o
v
oto
続体にわたる理論・モデリング技術をフルに活用し、新規な分子ナノシステムの
c
ta
i
r
t
impor
elec
ermo
r
e
a
h
開発を先導・具体化することを目指します。具体的な研究対象は、有機分子触媒、
t
ing
fur
] Add
3 nm
o
c
10
1 nm
l
SrTiO3 表面 STM 像、錯体超分子、イオン液体電解質、高機能ゴム・ゲル、液晶スカー PSS u
methy
d
y
l
stable
ical
ミオン格子（図反時計 り）等です。
amat
102 nm
m
e
l
b
pro
ゲル相
液体相
lished
Our goal is to lead the research and development of novel molecular nano-systemstranspo
the
,
S
S
:P
10 nm
DOT
ow
towards their materialization. Our theory and modeling techniques ranging from carries
ood h
derst
収縮
molecular to macroscopic continuum scales allow addressing diverse problems. PEDOT:
logy
orpho
The figures illustrate our research subjects: organocatalysts, STM imaging of SrTiO3 co-solv
ly
itical
u
g
surface, supramolecular complexes, ionic liquid electrolytes, high-function
struct
plorin
膨潤
e
h
t
fi
f
i
ess o
rubbers/gels, and liquid crystalline Skyrmion lattices (in a counter-clockwise order). sign
n exc
te
ake a
m
repor
o
t
der
a
s
r
e
t
t
c
ea
spe
PSS cr
e
g
n
cha
rrier
o
and
当グループでは、
産業技術に資する機能性材料として、
新規ソフトマテリアル（ス
s
akan
u
T
o
h
Irradiated
area
morp
Damages
e
v
r
e
マートマテリアル）の研究開発を行っています。例えば、ゲルや液晶、あるいは obs
istine
f
lid fi
o
n
o
i
高分子等を化学的手法を用いて高機能化・複合化することにより、新規な光相変 so pho
ddit
e
h
t
in
mor
ange
化材料や自己修復材料を開発することに成功しました。さらに、これらの材料の PEDOT:
ty is
i
v
i
t
c
ndu
ho
環境分野および情報技術分野への応用に取り組んでいます。
et al.
morp
yang
gh
u
an
thro
Our group aims at exploitation of functional soft-materials contributing to
e Ram
o
t
]
d
5
e
1
ut
11–
attrib
industrial technology. For instance, we successfully developed functional
c
a
]
r
[ 5
diff
DOT.
materials such as photo-responsive liquid crystals, phase change compounds,
r
n to
o
tructu
i
s
t
c
ffra
光により損傷が修復するゲル
and
self-healing
gels,
by
means
of
chemical
synthesis
and
composite
fabrication.
n
i
m
s
r
l
e
sta
det
nocry
Light-induced
self-healing of
,
We also work toward the practical use of these functional materials in the fields
wever
o
rienta
H
o
.
a functional gel
dded
v
of
environmental
and
information
technologies.
ive
Moreo
nduct
t
y
l
n
d
e
fer
har
d dif
h
nt
e
f the
m
o
p
o
vel
r
e
[
v
.
n
hes
is i
proac
有機分子や生体由来材料が持つやわらかな構造特性と自己組織化や界面での物質
o
heref
t
y
レーザー照射部
a
X-r
m
n
l
輸送・固定化などの省エネ型液体プロセスを活用した「やわらかい」デバイスの
e
l
l
fi
SS
cha
DOT:P
c
e
Calcium
phosphate
l
e
開発に取り組んでいます。具体的には、液晶性有機半導体材料、省エネ型コロイ the
for
ethod
a
c
i
r
fab
lar
ド光学素子、高機能バイオメディカル素子の開発を進めています。
olecu
.
h
scale
r
amas
e
t
Y
e
nom
図：レーザー援用バイオミメティック法によるリン酸カルシウムのパターン形成
V
U
ave
IR–
lms h
se
We work on the development of soft-devices in which the structural properties of soft
becau
arrier
c
y
l
b
oba
e 非照射部
g
a
t
l
materials (e.g. organic and biological molecules) and the energy-efficient liquid processes models
l vo
e Hal
;
d
y
t
i
s
Substrate
(e.g. self-organization and material transportation at the interface) are utilized. Specifically, the ad
den
rrier
is
t
s
c
a
e
e
f
incr
l ef
we are developing liquid crystalline organic semiconductors, energy-saving optical
e Hal
s
:P
creen
s
EDOT
S
P
S
devices based on colloidal particles, and highly-functional biomedical devices.
OT:P
g
r
n
o
i
f
z
le
gra
suitab
Figure: Calcium phosphate pattern formation by a laser-assisted biomimetic process.
X
.
s
A
r
W
o
(GI
nsist
m tra
s
d
y
n
X-ra
tz a
raher
t
the
e
roper
n
p
i
term
t
s
i
s
当グループでは、生体システム等自然界で実現されている柔らかくしなやかな動 tran
ical
eoret
y
h
o
r
w
t
c
sons
き・構造形成やそれらのシステムデザインを意識した新機能・材料研究を展開し spe it
e rea
tly
pac
n
a
a
c
c
gnifi
ています。特に、ゲル、高分子、コロイド、弾性不安定性、表面・界面、自己組 arge
of
ivity
ch
nduct
g
織化、非線形・非平衡現象などをキーワードに国際的視野に立ち研究を推進して
n
i
s
dded
u
a
s
udie
ic
electr
tion
います。 図：柔軟で伸縮可能な電子伝導性高強度ハイドロゲル
ffrac
G
E
e
the
angl
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形態機能ナノシステムグループ グループ長 : 増田光俊 / Morphofunctional Nanosystem Group Leader: Dr. Mitsutoshi MASUDA
受 賞 Awards
2014 年度高分子学会日立化成賞
2014 SPSJ Hitachi Chemical Award, The Society of Polymer Science, Japan
タイトル： 高分子粗視化モデルを用いた半導体リソグラフィープロセスシミュレー ショ ン研究
Study on the Simulation of Semiconductor Lithography Processes Using Coarse-Grained Polymer Models
受 賞 者： 森田裕史
Hiroshi MORITA
受 賞 日： 2014 . 9 . 17
第 35 回本多記念研究奨励賞
The 35th Honda Memorial Young Researcher Award
タイトル： ゲルを用いたカーボンナノチューブの新規分離法の開発
Development of New Separation Technologies for Carbon Nanotubes Using Gel
受 賞 者： 田中 丈士（ナノ炭素材料研究グループ長）
Takeshi TANAKA (Group Leader, Carbon Nanomaterials Research Group)
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ナノシステム研究部門のロゴは、「蜂 : Megaphragma caribea 」と「虫メガネ ( 電子顕微鏡 )」をデザインしています。
この蜂は飛行能力をもつ地上最小の昆虫 ( 寄生バチ ) です。翅 ( はね ) の色分けは、当研究部門の４つの研究の柱に対応
しています。青が情報通信・エレクトロニクス対応（IT システム）、緑が環境・エネルギー対応（グリーンシステム）、
ピンクがライフサイエンス対応（ソフトシステム）、そして黄が、上記３つを結び付けるテクノロジーブリッジです。
The logo of our research institute symbolizes a bee and a magnifier (electron microscope). The bee is called
Megaphragma caribea , which is known as the smallest animal in the world that can fly high by itself. The
four colors of its wings correspond to the four main pillars of our research activity: blue represents
information technology and electronics (IT System), green the environment and energy (Green System), pink
life science (Soft System), and yellow the Technology Bridge that connects the above three categories.
★お問合せ★
独立行政法人 産業技術総合研究所 ナノシステム研究部門
〒305-8565 茨城県つくば市東 1-1-1 中央第５事業所
Fax：029-861-6236 Mail：nri_web-ml@aist.go.jp
Web：http://unit.aist.go.jp/nri/index_ j.html
ツイッター：http://twitter.com/AIST_NRI
★CONTACT★
Manager Office, Nanosystem Research Institute
Address：Central 5, Higashi, Tsukuba, Ibaraki 305-8565 Japan
Fax：+81-29-861-6236 Mail：nri_web-ml@aist.go.jp
Web：http://unit.aist.go.jp/nri/
twitter：http://twitter.com/AIST_NRI
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