229
Part B
Growth an
Part B Growth and Characterization
12 Bulk Crystal Growth – Methods and Materials
Peter Capper, Southampton, UK
16 Wide-Bandgap II–VI Semiconductors:
Growth and Properties
Jifeng Wang, Sendai, Japan
Minoru Isshiki, Sendai, Japan
13 Single-Crystal Silicon: Growth and Properties
Fumio Shimura, Fukuroi, Japan
17 Structural Characterization
Paul D. Brown, Nottingham, UK
14 Epitaxial Crystal Growth:
Methods and Materials
Peter Capper, Southampton, UK
Stuart Irvine, Gwynedd, UK
Tim Joyce, Liverpool, UK
15 Narrow-Bandgap II–VI Semiconductors:
Growth
Peter Capper, Southampton, UK
18 Surface Chemical Analysis
David Sykes, Loughborough, UK
19 Thermal Properties and Thermal Analysis:
Fundamentals, Experimental Techniques
and Applications
Safa Kasap, Saskatoon, Canada
Dan Tonchev, Saskatoon, Canada
20 Electrical Characterization
of Semiconductor Materials and Devices
M. Jamal Deen, Hamilton, Canada
Fabien Pascal, Montpellier, France