APTM50HM65FT3G
Full - Bridge
MOSFET Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
13 14
Q3
11
22
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
7
19
10
23
Q2
8
Q4
26
4
27
3
30
29
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
51
38
204
±30
78
390
51
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
18
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM50HM65FT3G – Rev 1
Q1
VDSS = 500V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
APTM50HM65FT3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Min
VGS = 10V, ID = 25.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
65
3
Min
VGS = 10V
VBus = 250V
ID = 51A
Typ
7000
1400
90
140
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
70
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
R G = 3Ω
38
93
1035
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, R G = 3Ω
1556
Test Conditions
ns
75
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, R G = 3Ω
µJ
845
µJ
1013
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 51A
IS = - 51A
VR = 333V
diS/dt = 100A/µs
Max
100
500
78
5
±100
40
Source - Drain diode ratings and characteristics
Symbol
IS
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
2.6
Tj = 125°C
9.6
Max
51
38
1.3
15
270
540
Unit
A
V
V/ns
ns
µC
July, 2006
IDSS
Characteristic
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 51A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
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2–6
APTM50HM65FT3G – Rev 1
Symbol
APTM50HM65FT3G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
150
125
100
4.7
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
R 25
Max
0.32
Typ
50
3952
Max
Unit
°C/W
V
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM50HM65FT3G – Rev 1
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTM50HM65FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10&15V
160
7V
120
6.5V
80
6V
40
5.5V
5V
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
100
75
TJ=25°C
50
25
TJ=125°C
TJ=-55°C
0
0
25
2
4
6
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.1
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
125
60
1.05
ID, DC Drain Current (A)
Normalized to
VGS =10V @ 25.5A
VGS=10V
1
VGS=20V
0.95
0.9
50
40
30
20
10
0
10
20
30
40
50
ID, Drain Current (A)
60
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25
50
75
100
125
TC, Case Temperature (°C)
150
July, 2006
0
4–6
APTM50HM65FT3G – Rev 1
ID, Drain Current (A)
8V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
150
200
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50 75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50 75 100 125 150
Maximum Safe Operating Area
1000
1.2
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100 us
limited by RDSon
100
1 ms
10
10 ms
Single pulse
TJ =150°C
TC=25°C
1
100 ms
0.1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
10
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
VDS=100V
ID=51A
TJ=25°C
12
VDS=250V
10
VDS=400V
8
6
4
2
0
0
25
50
75
100 125 150 175
Gate Charge (nC)
July, 2006
0
1
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
VGS=10V
ID= 25.5A
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5–6
APTM50HM65FT3G – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50HM65FT3G
APTM50HM65FT3G
Rise and Fall times vs Current
160
70
140
td(off)
V DS=333V
RG =3Ω
T J=125°C
L=100µH
60
50
40
30
td(on)
100
80
tr
60
20
10
0
10
20
30 40 50 60
I D, Drain Current (A)
70
80
10
20
30 40 50 60
ID, Drain Current (A)
70
80
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
2.5
2
Switching Energy (mJ)
3
Eon
1.5
Eoff
1
0.5
V DS =333V
ID=51A
T J=125°C
L=100µH
4
3
Eoff
Eon
2
Eoff
1
0
0
30
40
50
60
70
0
80
5
10 15 20 25 30 35 40 45
I D, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
400
350
ZVS
300
250
I DR, Reverse Drain Current (A)
450
VDS=333V
D=50%
RG=3Ω
TJ=125°C
TC=75°C
200
ZCS
150
100
hard
switching
50
0
10
15
20 25 30 35
I D, Drain Current (A)
40
45
Source to Drain Diode Forward Voltage
1000
100
T J=150°C
TJ=25°C
10
1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source to Drain Voltage (V)
July, 2006
20
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM50HM65FT3G – Rev 1
10
Frequency (kHz)
tf
40
20
Switching Energy (mJ)
VDS=333V
RG=3Ω
T J=125°C
L=100µH
120
t r and tf (ns)
td(on) and t d(off) (ns)
Delay Times vs Current
80